MOSFET. FDMC7572S Datasheet

FDMC7572S Datasheet PDF, Equivalent


Part Number

FDMC7572S

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDMC7572S Datasheet


FDMC7572S Datasheet
August 2011
FDMC7572S
N-Channel Power Trench® SyncFETTM
25 V, 40 A, 3.15 mΩ
Features
General Description
„ Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A
„ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ 100% UIL Tested
„ RoHS Compliant
The FDMC7572S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top Bottom
S Pin 1
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
25
±20
40
103
22.5
120
84
52
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.4
53
°C/W
Device Marking
FDMC7572S
Device
FDMC7572S
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC7572S Rev.C1
1
www.fairchildsemi.com

FDMC7572S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
25 V
21 mV/°C
500 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 22.5 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 22.5 A, TJ = 125 °C
VDS = 5 V, ID = 22.5 A
1.2
1.7 3.0
V
-5 mV/°C
2.5 3.15
3.6 4.7 mΩ
3.5 4.5
122 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
2031
596
134
1.1
2705
795
205
2.4
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 22.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 13 V
ID = 22.5 A
11 22 ns
3.6 10 ns
26 41 ns
3 10 ns
31 44 nC
14 20 nC
6.5 nC
3.9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 22.5 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.79 1.2
0.47 0.8
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 22.5 A, di/dt = 300 A/μs
24 39 ns
19 34 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMC7572S Rev.C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMC7572S N-Channel Power Trench® SyncF ETTM August 2011 FDMC7572S N-Channel Power Trench® SyncFETTM 25 V, 40 A, 3. 15 mΩ Features General Description „ Max rDS(on) = 3.15 mΩ at VGS = 10 V , ID = 22.5 A „ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A „ Advanced P ackage and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ 100% UIL Tested „ RoHS Compliant The FDMC7572S has be en designed to minimize losses in power conversion application. Advancements i n both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent sw itching performance. This device has th e added benefit of an efficient monolit hic Schottky body diode. Applications Synchronous Rectifier for DC/DC Conve rters „ Notebook Vcore/ GPU low side s witch „ Networking Point of Load low s ide switch „ Telecom secondary side r ectification Top Bottom S Pin 1 S S G D5 D6 4G 3S D D D D Power 33 MOSFET Maximum Ratings TA = .
Keywords FDMC7572S, datasheet, pdf, Fairchild Semiconductor, MOSFET, DMC7572S, MC7572S, C7572S, FDMC7572, FDMC757, FDMC75, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)