MOSFET. FDMC8588 Datasheet

FDMC8588 Datasheet PDF, Equivalent


Part Number

FDMC8588

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC8588 Datasheet PDF


FDMC8588 Datasheet
FDMC8588
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 mΩ
Features
„ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A
„ State-of-the-art switching performance
„ Lower output capacitance, gate resistance, and gate charge
boost efficiency
„ Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
„ RoHS Compliant
November 2014
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ High side switching for high end computing
„ High power density DC-DC synchronous buck converter
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
Power 33
S
G
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Package limited) TC = 25 °C
- Continuous (Silicon Limited) TC = 25 °C
- Continuous
- Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±12
40
59
16.5
60
29
26
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
4.7
53
°C/W
Device Marking
08OD
Device
FDMC8588
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D4
1
www.fairchildsemi.com

FDMC8588 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA , VGS = 0 V
25
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA , referenced to 25 °C
17 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
1 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 12 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
0.8 1.4 1.8 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA , referenced to 25 °C
-4 mV/°C
VGS = 10 V, ID = 17 A
3.5 5.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 16.5 A
4.3 5.7 mΩ
VGS = 10 V, ID = 17 A,TJ = 125 °C
4.8 6.9
gFS Forward Transconductance
VDD = 5 V, ID = 16.5 A
85 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
1228 1720 pF
441 620 pF
69 100 pF
0.1 0.5 1.5 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5V
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 16.5A,
VGS = 10 V, RGEN = 6 Ω
VDD = 13 V, ID = 16.5 A
8 16 ns
3 10 ns
25 40 ns
2 10 ns
12 17 nC
3.0 nC
3.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 16.5 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 16.5 A, di/dt = 100 A/μs
0.7 1.2 V
0.8 1.2 V
25 ns
10 nC
Notes:
1. RθJA
is
determined
with
the
device
mounted
on
a
1in2
pad
2
oz
copper
pad
on
a
1.5
x
1.5
in.
board
of
FR-4
material.
RθJC
is
guaranteed
by
design
while
RθCA
is
determined
by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10V. 100% tested at L = 0.1 mH, IAS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. The continuous Vds rating is 25V; however, a pulse of 28 V peak voltage for no longer than 3ns duration at 500KHz frequency can be applied.
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D4
2
www.fairchildsemi.com


Features Datasheet pdf FDMC8588 N-Channel PowerTrench® MOSFET FDMC8588 N-Channel PowerTrench® MOSFE T 25 V, 40 A, 5.7 mΩ Features „ Max r DS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 1 6.5 A „ State-of-the-art switching per formance „ Lower output capacitance, g ate resistance, and gate charge boost e fficiency „ Shielded gate technology r educes switch node ringing and increase s immunity to EMI and cross conduction „ RoHS Compliant November 2014 Genera l Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convention al switching PWM controllers. It has be en optimized for low gate charge, low r DS(on), fast switching speed and body d iode reverse recovery performance. Appl ications „ High side switching for hig h end computing „ High power density D C-DC synchronous buck converter Top Bo ttom S Pin 1 S S G S S D D D D D D Power 33 S G D D MOSFET Maximum Ratings TA = 25 °C unless o.
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