FDMC8882

FDMC8882 N-Channel Power Trench® MOSFET FDMC8882 N-Channel Power Trench® MOSFET 30 V, 16 A, 14.3 m: May 2014 Features General Description „ Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A „ Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application „ High side in DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.3x3.3 DD D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Vo...