MOSFET. FDMC8882 Datasheet

FDMC8882 Datasheet PDF, Equivalent


Part Number

FDMC8882

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMC8882 Datasheet


FDMC8882 Datasheet
FDMC8882
N-Channel Power Trench® MOSFET
30 V, 16 A, 14.3 m:
May 2014
Features
General Description
„ Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A
„ Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
16
34
10.5
40
18
2.3
-55 to +150
Units
V
V
A
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
6.6
53
°C/W
Device Marking
FDMC8882
Device
FDMC8882
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C3
1
www.fairchildsemi.com

FDMC8882 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
30
V
ID = 250 PA, referenced to 25 °C
25 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = ±20 V, VDS = 0 V
1
250
±100
PA
nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 10.5 A
VGS = 4.5 V, ID = 8.3 A
VGS = 10 V, ID = 10.5 A
TJ = 125 °C
VDD = 5 V, ID = 10.5 A
1.2 1.9 2.5
V
-5 mV/°C
12.4 14.3
16.0 22.5 m:
17.4
33 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
710 945 pF
140 185 pF
90 135 pF
1.0 :
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
VDD = 15 V, ID = 10.5 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 10.5 A
7 14 ns
3 10 ns
17 30 ns
2 10 ns
14 20 nC
7 10 nC
2.3 nC
2.8 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 10.5 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 10.5 A, di/dt = 100 A/Ps
0.88
0.76
16
4.4
1.2
1.2
28
10
V
ns
nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C3
2
www.fairchildsemi.com


Features Datasheet pdf FDMC8882 N-Channel Power Trench® MOSFET FDMC8882 N-Channel Power Trench® MOS FET 30 V, 16 A, 14.3 m: May 2014 Feat ures General Description „ Max rDS(o n) = 14.3 m: at VGS = 10 V, ID = 10.5 A „ Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A „ High performance techn ology for extremely low rDS(on) „ Term ination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced usi ng Fairchild Semiconductor’s advanced Power Trench® process that has been e specially tailored to minimize the on-s tate resistance. This device is well su ited for Power Management and load swit ching applications common in Notebook C omputers and Portable Battery Packs. A pplication „ High side in DC - DC Buc k Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.3x3. 3 DD D D D5 D6 D7 D8 4G 3S 2S 1S MO SFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Vo.
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