FDMC8032L

FDMC8032L Dual N-Channel PowerTrench® MOSFET October 2013 FDMC8032L Dual N-Channel PowerTrench® MOSFET 40 V, 7 A, 20 mΩ Features General Description „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A „ Low Inductance Packaging Shortens Rise/Fall Times „ Lower Switching Losses „ 100% Rg Tested „ Termination is Lead-free and RoHS Compliant This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Applications „ Battery Protection „ Load Switching „ Point of Load Pin 1 Pin 1 G1 S1 S1 S1 D1 D2 G2 S2 S2 S2 Power 33 G1 S1 S1 S1 G2 S2 S2 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power...