FDMC86570L

FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 84 A, 4.3 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion Pin 1 Pin 1 S S SG S S D D D DD D SD GD Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC ...