FDMC86116LZ

FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 7.5 A, 103 mΩ November 2013 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL Tested „ RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application „ DC - DC Conversion Top 8765 Bottom DD D D S D SD SD 1 234 GS S S MLP 3.3x3.3 G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain ...