MOSFET. FDMC6686P Datasheet

FDMC6686P Datasheet PDF, Equivalent


Part Number

FDMC6686P

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC6686P Datasheet


FDMC6686P Datasheet
February 2015
FDMC6686P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 4 mΩ
Features
General Description
„ Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
„ Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
„ Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Applications
„ Load Switch
„ Battery Management
„ Power Management
„ Reverse Polarity Protection
Pin 1
Pin 1
S
S
SG
D
DD
D
S
S
S
G
D
D
D
D
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-20
±8
-56
-18
-377
40
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.1
53
°C/W
Device Marking
FDMC6686P
Device
FDMC6686P
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1
1
www.fairchildsemi.com

FDMC6686P Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
ID = -250 μA, referenced to 25 °C
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-20 V
-15 mV/°C
-1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
ID = -250 μA, referenced to 25 °C
VGS = -4.5 V, ID = -18 A
VGS = -2.5 V, ID = -16 A
VGS = -1.8 V, ID = -11 A
VGS = -4.5 V, ID = -18 A, TJ = 125 °C
VDS = -5 V, ID = -18 A
-0.4
-0.75
3
3.3
4.1
6
4.3
116
-1 V
mV/°C
4
5.7
mΩ
11.5
6.5
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
8800
1520
1340
6.2
13200
2280
2010
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -18 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -10 V, ID = -18 A,
VGS = -4.5 V
25 40
77 122
317 506
178 285
87 122
14
24
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = -18 A
VGS = 0 V, IS = -2 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -18 A, di/dt = 100 A/μs
-0.7 -1.2
-0.6 -1.2
38 61
24 39
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Pulse Id refers to Forward Bias Safe Operation Area.
©2014 Fairchild Semiconductor Corporation
FDMC6686P Rev.C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMC6686P P-Channel PowerTrench® MOSFET February 2015 FDMC6686P P-Channel Po werTrench® MOSFET -20 V, -56 A, 4 mΩ Features General Description „ Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = - 18 A „ Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A „ Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A „ Hig h performance trench technology for ext remely low rDS(on) „ High power and cu rrent handling capability in a widely u sed surface mount package „ Lead-free and RoHS Compliant This P-Channel MOSF ET is produced using Fairchild Semicond uctor’s advanced PowerTrench® proces s that has been optimized for rDS(ON), switching performance and ruggedness. A pplications „ Load Switch „ Battery M anagement „ Power Management „ Revers e Polarity Protection Pin 1 Pin 1 S S SG D DD D S S S G D D D D Top Bot tom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbo l VDS VGS ID PD TJ, TSTG Parameter Dr ain to Source Voltage Gate to Source Voltage Drain Current -C.
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