MOSFET
FDMT800150DC N-Channel Dual CoolTM 88 Power Trench® MOSFET
July 2015
FDMT800150DC
N-Channel Dual CoolTM 88 PowerTrenc...
Description
FDMT800150DC N-Channel Dual CoolTM 88 Power Trench® MOSFET
July 2015
FDMT800150DC
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
150 V, 99 A, 6.5 mΩ
Features
Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications
MSL1 robust package design
OringFET / Load Switching
100% UIL tested
Synchronous Rectification
RoHS Compliant
DC-DC Conversion
Pin 1
Pin 1
G S S
G
S SS
D D
D D ...
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