MOSFET
FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET
January 2015
FDMS86202ET120
N-Channel Shielded Gate PowerTr...
Description
FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET
January 2015
FDMS86202ET120
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 102 A, 7.2 mΩ
Features
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Top Pin 1
Bottom S Pin 1 S S G
D D D D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Dr...
Similar Datasheet
- FDMS86202ET120 MOSFET - Fairchild Semiconductor