MOSFET. FDMC86260ET150 Datasheet

FDMC86260ET150 Datasheet PDF, Equivalent


Part Number

FDMC86260ET150

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
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FDMC86260ET150 Datasheet
FDMC86260ET150
N-Channel Power Trench® MOSFET
150 V, 25 A, 34 mΩ
January 2015
Features
General Description
„ Extended TJ rating to 175°C
„ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
„ Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
„ High performance technology for extremely low rDS(on)
„ 100% UIL Tested
„ Termination is Lead-free
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
„ RoHS Compliant
Pin 1
Pin 1
S
S
SG
S
S
D
D
D
DD
D
Top Bottom
Power 33
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
150
±20
25
18
5.4
116
121
65
2.8
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86260ET
Device
FDMC86260ET150
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMC86260ET150 Rev. C1
1
www.fairchildsemi.com

FDMC86260ET150 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
110 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 5.4 A
VGS = 6 V, ID = 4.8 A
VGS = 10 V, ID = 5.4 A, TJ = 125 °C
VDD = 10 V, ID = 5.4 A
2
2.7 4 V
-9 mV/°C
27 34
31 44 mΩ
55 69
19 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
1000 1330 pF
105 140 pF
4.8 10 pF
0.1 0.6 1.8 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 5.4 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V
VDD = 75 V,
ID = 5.4 A
9.5 19 ns
2 10 ns
17 30 ns
3.3 10 ns
15 21 nC
9.7 14 nC
4.0 nC
3.1 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 5.4 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
0.77 1.3
0.72 1.2
V
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 5.4 A, di/dt = 100 A/μs
64 102 ns
85 137 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 121 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 9 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 22 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMC86260ET150 Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ Ja nuary 2015 Features General Descripti on „ Extended TJ rating to 175°C „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A „ Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A „ High performance t echnology for extremely low rDS(on) „ 100% UIL Tested „ Termination is Lead- free This N-Channel MOSFET is produced using Fairchild Semiconductor‘s adva nced Power Trench® process that has be en especially tailored to minimize the on-state resistance and yet maintain su perior switching performance. Applicati on „ DC-DC Conversion „ RoHS Complia nt Pin 1 Pin 1 S S SG S S D D D D D D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless othe rwise noted Symbol VDS VGS ID EAS PD T J, TSTG Parameter Drain to Source Vol tage Gate to Source Voltage Drain Cur rent -Continuous -Continuous -Continuo us -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse .
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