FDMC86260ET150

FDMC86260ET150 N-Channel Power Trench® MOSFET FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ January 2015 Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A „ Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion „ RoHS Compliant Pin 1 Pin 1 S S SG S S D D D DD D Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse ...