P-Channel MOSFET
FDMA86265P P-Channel PowerTrench® MOSFET
August 2018
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Fea...
Description
FDMA86265P P-Channel PowerTrench® MOSFET
August 2018
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Features
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg
This product is optimised for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications
Active Clamp Switch Load Switch
Pin 1 Drain
DD G Source
BBootttotomm DDraraininCCoonnta- ct DD
DD
DD S MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3) (Note 1a) (Note 1b)
Ratings -150 ±25 -1 -2 6 2.4 0.9
-55 to + 150
Units V V
A
mJ
W
°C
RθJA RθJA
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a) (Not...
Similar Datasheet