FDMA908PZ

FDMA908PZ Single P-Channel PowerTrench® MOSFET FDMA908PZ Single P-Channel PowerTrench® MOSFET February 2014 -12 V, -12 A, 12.5 mΩ Features „ Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A „ Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A „ Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A „ Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm „ HBM ESD protection level > 2.8 kV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain DD G Source Bottom Drain Contact D D D D DD S MicroFET 2X2 (Bottom View) G S MOSFET Maximum Ratings TA = 2...