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FDME905PT Dataheets PDF



Part Number FDME905PT
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDME905PT DatasheetFDME905PT Datasheet (PDF)

FDME905PT P-Channel PowerTrench® MOSFET FDME905PT P-Channel PowerTrench® MOSFET -12 V, -8 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A „ Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A „ Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ RoHS Compliant October 2013 General Description This device is designed specifically for battery charging or lo.

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FDME905PT P-Channel PowerTrench® MOSFET FDME905PT P-Channel PowerTrench® MOSFET -12 V, -8 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A „ Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A „ Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ RoHS Compliant October 2013 General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Pin 1 G D D Bottom Drain Contact S D1 6D D2 S D G3 D 5D 4S TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain.


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