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FDME905PT P-Channel PowerTrench® MOSFET
FDME905PT
P-Channel PowerTrench® MOSFET
-12 V, -8 A, 22 mΩ
Features
Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
RoHS Compliant
October 2013
General Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Pin 1
G D
D
Bottom Drain Contact
S D1
6D
D2
S D G3 D
5D 4S
TOP
BOTTOM
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter
Drain.