MOSFET. FDMA3027PZ Datasheet

FDMA3027PZ Datasheet PDF, Equivalent


Part Number

FDMA3027PZ

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDMA3027PZ Datasheet PDF


FDMA3027PZ Datasheet
FDMA3027PZ
Dual P-Channel PowerTrench® MOSFET
-30 V, -3.3 A, 87 mΩ
July 2014
Features
General Description
„ Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A
„ Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A
„ HBM ESD protection level > 2 KV typical (Note 3)
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
This device is designed specifically as a single package solution
for dual switching requirements such as gate driver for larger
Mosfets. It features two independent P-Channel MOSFETs with
low on-state resistance for minimum conduction losses. The
MicroFET 2x2 package offers exceptional thermal performance
for its physical size and is well suited to linear mode applications.
G-S zener has been added to enhance ESD voltage level.
Applications
„ Load Switch
„ Discrete Gate Driver
PIN 1
S1 G1 D2
D1 D2
S1 1
G1 2
6 D1
5 G2
D1 G2 S2
Top Bottom
MicroFET 2x2
D2 3
4 S2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-30
±25
-3.3
-15
1.4
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
86
173
69
151
160
133
°C/W
Device Marking
327
Device
FDMA3027PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA3027PZ Rev.C1
1
www.fairchildsemi.com

FDMA3027PZ Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
ID = -250 μA, referenced to 25 °C
VDS = -24 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
ID = -250 μA, referenced to 25 °C
VGS = -10 V, ID = -3.3 A
VGS = -4.5 V, ID = -2.3 A
VGS = -10 V, ID = -3.3 A, TJ = 125 °C
VDS = -5 V, ID = -3.3 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
VDD = -15 V, ID = -3.3 A,
VGS = -10 V, RGEN = 6 Ω
VGS = 0 V to -10 V
VGS = 0 V to -5 V
VDD = -15 V,
ID = -3.3 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -3.3 A
(Note 2)
IF = -3.3 A, di/dt = 100 A/μs
Min
-30
-1
Typ
-22
-1.9
5
69
108
97
6
324
59
53
12
5.2
3
17
11
7.2
4.1
1.0
1.9
-0.94
20
10
Max Units
V
mV/°C
-1 μA
±10 μA
-3 V
mV/°C
87
152 mΩ
122
S
435 pF
80 pF
80 pF
Ω
11 ns
10 ns
31 ns
25 ns
10 nC
6 nC
nC
nC
-1.3 V
32 ns
18 nC
©2012 Fairchild Semiconductor Corporation
FDMA3027PZ Rev.C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMA3027PZ Dual P-Channel PowerTrench® MOSFET FDMA3027PZ Dual P-Channel Power Trench® MOSFET -30 V, -3.3 A, 87 mΩ July 2014 Features General Descriptio n „ Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A „ Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 A „ HBM E SD protection level > 2 KV typical (Not e 3) „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ R oHS Compliant This device is designed specifically as a single package soluti on for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSF ETs with low on-state resistance for mi nimum conduction losses. The MicroFET 2 x2 package offers exceptional thermal p erformance for its physical size and is well suited to linear mode application s. G-S zener has been added to enhance ESD voltage level. Applications „ Loa d Switch „ Discrete Gate Driver PIN 1 S1 G1 D2 D1 D2 S1 1 G1 2 6 D1 5 G2 D1 G2 S2 Top Bottom MicroFET 2x2 D2 3 4 S2 MOSFET Maximum Ra.
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