MOSFET
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
September 2014
FDZ1323NZ
Common Drain N-Channel 2.5 ...
Description
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
September 2014
FDZ1323NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
20 V, 10 A, 13 mΩ
Features
Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A Occupies only 3 mm2 of PCB area Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability HBM ESD protection level > 3.6 kV (Note 3) RoHS Compliant
General Description
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art “low pitch” WLCSP packaging process, the FDZ1323NZ minimi...
Similar Datasheet
- FDZ1323NZ MOSFET - Fairchild Semiconductor