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FDZ1323NZ

Fairchild Semiconductor

MOSFET

FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET September 2014 FDZ1323NZ Common Drain N-Channel 2.5 ...


Fairchild Semiconductor

FDZ1323NZ

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Description
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET September 2014 FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20 V, 10 A, 13 mΩ Features „ Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A „ Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A „ Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A „ Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A „ Occupies only 3 mm2 of PCB area „ Ultra-thin package: less than 0.35 mm height when mounted to PCB „ High power and current handling capability „ HBM ESD protection level > 3.6 kV (Note 3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art “low pitch” WLCSP packaging process, the FDZ1323NZ minimi...




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