MOSFET
FDS6910
September 2004
FDS6910
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Log...
Description
FDS6910
September 2004
FDS6910
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
7.5 A, 30 V.
RDS(ON) = 13 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V
Fast switching speed Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD1 DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5 6 Q1 7
Q2
8
4 3 2 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Single O...
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