FDS5351

FDS5351 N-Channel PowerTrench® MOSFET April 2008 FDS5351 N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ Features General Description „ Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A „ Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ RoHS Compliant Application „ Inverter Switch „ Synchronous Rectifier „ Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25°C Power Dissipation TA = 25°C Operating and Storage Jun...