MOSFET
FDS86252 N-Channel Power Trench® MOSFET
April 2011
FDS86252
N-Channel Power Trench® MOSFET
150 V, 4.5 A, 55 mΩ
Featur...
Description
FDS86252 N-Channel Power Trench® MOSFET
April 2011
FDS86252
N-Channel Power Trench® MOSFET
150 V, 4.5 A, 55 mΩ
Features
General Description
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Application
DC-DC Conversion
D D D
D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Po...
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