FDS6681Z

FDS6681Z Aug 2015 FDS6681Z 30 Volt P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features –20 A, –30 V. RDS(ON) = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V Extended VGSS range (–25V) for battery applications HBM ESD protection level of 8kV typical (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability Termination is Lead-free and RoHS Compliant D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Opera...