MOSFET
FDT86102LZ N-Channel PowerTrench® MOSFET
November 2010
FDT86102LZ
N-Channel PowerTrench® MOSFET
100 V, 6.6 A, 28 mΩ Fe...
Description
FDT86102LZ N-Channel PowerTrench® MOSFET
November 2010
FDT86102LZ
N-Channel PowerTrench® MOSFET
100 V, 6.6 A, 28 mΩ Features
Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
SOT-223
S D G
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipati...
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