MOSFET
FDT86106LZ N-Channel PowerTrench® MOSFET
FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
Gen...
Description
FDT86106LZ N-Channel PowerTrench® MOSFET
FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL tested
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Application
DC - DC Conversion
RoHS Compliant
D
SOT-223
S
D G
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Cur...
Similar Datasheet