MOSFET
FDT86246 N-Channel Power Trench® MOSFET
December 2010
FDT86246
N-Channel Power Trench® MOSFET
150 V, 2 A, 236 mΩ
Feat...
Description
FDT86246 N-Channel Power Trench® MOSFET
December 2010
FDT86246
N-Channel Power Trench® MOSFET
150 V, 2 A, 236 mΩ
Features
General Description
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package Fast switching speed 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch Primary Switch
D
SOT-223
S D G
D GDS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperatur...
Similar Datasheet