FDT86256

FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A „ Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A „ Very low Qg and Qgd compared to competing trench technologies August 2011 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant Applications „ DC-DC conversion „ Inverter „ Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 ...