FDC637BNZ

FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mΩ Features General Description September 2007 tm „ Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A „ Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A „ Fast switching speed „ Low gate charge (8nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) „ HBM ESD protection level > 2kV typical (Note 3) „ Manufactured using green packaging material „ Halide-Free „ RoHS Compliant This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with ...