MOSFET
FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET
October 2015
FDN86501LZ
N-Channel Shielded Gate PowerTrench® M...
Description
FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET
October 2015
FDN86501LZ
N-Channel Shielded Gate PowerTrench® MOSFET
60 V, 2.6 A, 116 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL tested
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
Primary DC-DC Switch Load Switch
RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage
-Continuous -Pulsed Single Pulse Aval...
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