FDN86246

FDN86246 N-Channel PowerTrench® MOSFET December 2010 FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m: Features General Description „ Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A „ Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application „ PD Switch „ 100% UIL tested „ RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1...