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FDT1600N10ALZ — N-Channel PowerTrench® MOSFET
FDT1600N10ALZ
N-Channel PowerTrench® MOSFET
100 V, 5.6 A, 160 mΩ
November 2013
Features
• RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.
Application
• Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter
D D
SOT-223
S D G
GDS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
Drain to Source Voltage Gate to Source Voltage
Drain Current
Drain Current Single Pulse Avalanche Energy Peak D.