DatasheetsPDF.com

FDT1600N10ALZ Dataheets PDF



Part Number FDT1600N10ALZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDT1600N10ALZ DatasheetFDT1600N10ALZ Datasheet (PDF)

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has b.

  FDT1600N10ALZ   FDT1600N10ALZ



Document
FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulse Avalanche Energy Peak D.


FDN86265P FDT1600N10ALZ FDG327NZ


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)