FDY102PZ

FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET April 2014 –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A „ Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A „ Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A „ Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V. Application „ Li-Ion Battery Pack S G D SC89-3 G1 S2 3D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Charact...