MOSFET
FDB082N15A — N-Channel PowerTrench® MOSFET
April 2015
FDB082N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.2 mΩ
F...
Description
FDB082N15A — N-Channel PowerTrench® MOSFET
April 2015
FDB082N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.2 mΩ
Features
RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge, QG = 64.5 nC (Typ.) High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter
D D
G S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
VGSS
ID
IDM EAS dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Drain Current
- DC...
Similar Datasheet
- FDB082N15A MOSFET - Fairchild Semiconductor