MOSFET. FDP025N06 Datasheet

FDP025N06 Datasheet PDF, Equivalent


Part Number

FDP025N06

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDP025N06 Datasheet PDF


FDP025N06 Datasheet
FDP025N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.5 mΩ
November 2013
Features
• RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Renewable system
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP025N06
60
±20
265
190
120
1060
2531
6.0
395
2.6
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP025N06
0.38
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
FDP025N06 Rev. C2
1
www.fairchildsemi.com

FDP025N06 Datasheet
Package Marking and Ordering Information
Part Number
FDP025N06
Top Mark
FDP025N06
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
60
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 48 V, ID = 75 A
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30 V, ID = 75 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
-
-
-
-
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.9 mH, IAS = 75 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 75 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
-
0.04
-
-
-
-
-
1
500
±100
V
V/oC
μA
nA
3.5 4.5 V
1.9 2.5 mΩ
200 - S
11190
1610
750
174
54
50
14885
2140
1125
226
-
-
pF
pF
pF
nC
nC
nC
134 278 ns
324 658 ns
348 706 ns
250 510 ns
- 265 A
-
1060
A
- 1.3 V
69 - ns
152 - nC
©2008 Fairchild Semiconductor Corporation
FDP025N06 Rev. C2
2
www.fairchildsemi.com


Features Datasheet pdf FDP025N06 — N-Channel PowerTrench® MO SFET FDP025N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.5 mΩ November 2013 Features • RDS(on) = 1.9 mΩ (T yp.) @ VGS = 10 V, ID = 75 A • Fast S witching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power an d Current Handling Capability • RoHS Compliant Description This N-Channel M OSFET is produced using Fairchild Semic onductor’s advanced PowerTrench® pro cess that has been tailored to minimize the on-state resistance while maintain ing superior switching performance. App lications • Synchronous Rectification for ATX / Server / Telecom PSU • Bat tery Protection Circuit • Motor Drive s and Uninterruptible Power Supplies Renewable system D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unle ss otherwise noted. Symbol VDSS VGSS I D IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon .
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