MOSFET
FDP030N06 — N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
F...
Description
FDP030N06 — N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
Features
RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable system
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25...
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