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FDP032N08 Dataheets PDF



Part Number FDP032N08
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDP032N08 DatasheetFDP032N08 Datasheet (PDF)

FDP032N08 — N-Channel PowerTrench® MOSFET FDP032N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state.

  FDP032N08   FDP032N08


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FDP032N08 — N-Channel PowerTrench® MOSFET FDP032N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Parameter Continuous Continuous Continuous (TC (TC (TC = = = 25oC, 100oC, 25oC, Silicon.


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