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FDP032N08 — N-Channel PowerTrench® MOSFET
FDP032N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.5 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
Parameter
Continuous Continuous Continuous
(TC (TC (TC
= = =
25oC, 100oC,
25oC,
Silicon.