MOSFET
FDP090N10 — N-Channel PowerTrench® MOSFET
FDP090N10
N-Channel PowerTrench® MOSFET
100 V, 75 A, 9 mΩ
November 2013
Fea...
Description
FDP090N10 — N-Channel PowerTrench® MOSFET
FDP090N10
N-Channel PowerTrench® MOSFET
100 V, 75 A, 9 mΩ
November 2013
Features
RDS(on) = 7.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micor Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 85oC...
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