MOSFET. FDP120N10 Datasheet

FDP120N10 Datasheet PDF, Equivalent


Part Number

FDP120N10

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDP120N10 Datasheet PDF


FDP120N10 Datasheet
FDP120N10
N-Channel PowerTrench® MOSFET
100 V, 74 A, 12 mΩ
November 2013
Features
• RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micor Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP120N10
100
±20
74
52
296
198
6.0
170
1.14
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP120N10
0.88
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP120N10 Rev. C4
1
www.fairchildsemi.com

FDP120N10 Datasheet
Package Marking and Ordering Information
Part Number
FDP120N10
Top Mark
FDP120N10
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V,TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 74 A
VDS = 10 V, ID = 74 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 80 V ID = 74 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 74 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 74 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 74 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.11 mH, IAS = 60 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 74 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
100
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
9.7
105
4215
405
170
66
26
20
27
105
39
15
-
-
-
44
67
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5 V
12 mΩ
-S
5605
540
255
86
-
-
pF
pF
pF
nC
nC
nC
64 ns
220 ns
88 ns
40 ns
74 A
296 A
1.3 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDP120N10 Rev. C4
2
www.fairchildsemi.com


Features Datasheet pdf FDP120N10 — N-Channel PowerTrench® MO SFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2 013 Features • RDS(on) = 9.7 mΩ (Ty p.) @ VGS = 10 V, ID = 74 A • Fast Sw itching Speed • Low Gate Charge • H igh Performance Trench Technology for E xtremely Low RDS(on) • High Power and Current Handling Capability • RoHS C ompliant Description This N-Channel MO SFET is produced using Fairchild Semico nductor’s advanced PowerTrench® proc ess that has been tailored to minimize the on-state resistance while maintaini ng superior switching performance. Appl ications • Synchronous Rectification for ATX / Server / Telecom PSU • Batt ery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micor Solar Inverter D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC u nless otherwise noted. Symbol VDSS VGS S ID IDM EAS dv/dt PD TJ, TSTG TL Para meter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC =.
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