MOSFET. FDPF045N10A Datasheet

FDPF045N10A Datasheet PDF, Equivalent


Part Number

FDPF045N10A

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
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FDPF045N10A Datasheet
August 2014
FDPF045N10A
N-Channel PowerTrench® MOSFET
100 V, 67 A, 4.5 mΩ
Features
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 67 A
• Fast Switching Speed
• Low Gate Charge, QG = 57 nC(Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
G
DS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds
FDPF045N10A
100
±20
67
47
268
637
6.0
43
0.29
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF045N10A
3.5
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
1
www.fairchildsemi.com

FDPF045N10A Datasheet
Package Marking and Ordering Information
Device Marking
FDPF045N10A
Device
FDPF045N10A
Package
TO-220F
Packing Method
Tube
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V
ID = 250μA, Referenced to 25oC
VDS = 80V, VGS = 0V
VDS = 80V, TC = 150oC
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 67A
VDS = 10V, ID = 67A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 50V, VGS = 0V
VGS = 10V, VDS = 50V
ID = 100A
f = 1MHz
Min. Typ. Max. Unit
100 -
- 0.06
-V
- V/oC
--1
μA
- - 500
- - ±100 nA
2.0 - 4.0 V
- 3.7 4.5 mΩ
- 127 - S
- 3961 5270 pF
- 925 1230 pF
- 34 - pF
- 1521 - pF
- 57 74 nC
- 17 - nC
- 8 - nC
- 13 - nC
- 1.9 - Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50V, ID = 100A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 67A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, VDD = 50V, ISD = 100A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C
3. ISD 100A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
-
-
-
-
23 56 ns
26 62 ns
50 110 ns
15 40 ns
- 67 A
- 268 A
- 1.3 V
75 - ns
120 - nC
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C3
2
www.fairchildsemi.com


Features Datasheet pdf FDPF045N10A N-Channel PowerTrench® MOSF ET August 2014 FDPF045N10A N-Channel PowerTrench® MOSFET 100 V, 67 A, 4.5 m Ω Features • RDS(on) = 3.7 mΩ ( Ty p.)@ VGS = 10 V, ID = 67 A • Fast Swi tching Speed • Low Gate Charge, QG = 57 nC(Typ.) • High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capa bility • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tai lored to minimize the on-state resistan ce while maintaining superior switching performance. Applications • Synchron ous Rectification for ATX / Server / Te lecom PSU • Motor drives and Uninterr uptible Power Supplies • Micro Solar Inverter D G DS TO-220F G S MOSFET Maximum Ratings TC = 25oC unless other wise noted* Symbol VDSS VGSS ID IDM EA S dv/dt PD TJ, TSTG TL Parameter Drai n to Source Voltage Gate to Source Vol tage Drain Current Drain Current - Continuous (TC = 25oC) - Co.
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