FDMS8560S

FDMS8560S N-Channel PowerTrench® SyncFETTM FDMS8560S November 2014 N-Channel PowerTrench® SyncFETTM 25 V, 70 A, 1.8 mΩ Features „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 28 A „ High performance technology for extremely low rDS(on) „ SyncFETTM Schottky Body Diode „ RoHS Compliant General Description This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Top Bottom Pin 1 S D5 4G S S G D6 3S Power 56 D D D D D7 D8 2S 1S MOSFET Maximum Rat...