MOSFET. FDMS8560S Datasheet

FDMS8560S Datasheet PDF, Equivalent


Part Number

FDMS8560S

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS8560S Datasheet PDF


FDMS8560S Datasheet
FDMS8560S
November 2014
N-Channel PowerTrench® SyncFETTM
25 V, 70 A, 1.8 mΩ
Features
„ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
„ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 28 A
„ High performance technology for extremely low rDS(on)
„ SyncFETTM Schottky Body Diode
„ RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
Power 56
D
D
D
D
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
12
70
30
150
79
65
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
1.9
50
°C/W
Device Marking
05OD
Device
FDMS8560S
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D2
1
www.fairchildsemi.com

FDMS8560S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = +12 V/-8 V, VDS = 0 V
25
V
20 mV/°C
500
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.1 1.4 2.2
V
ID = 10 mA, referenced to 25 °C
-3 mV/°C
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 28 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 5 V, ID = 30 A
1.4 1.8
1.6 2.1 mΩ
2.1 2.8
304 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
4350
1270
138
0.8
pF
pF
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
13 ns
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD = 13 V, ID = 30 A,
VGS = 10 V, RGEN = 6 Ω
6 ns
45 ns
tf Fall Time
5 ns
Qg Total Gate Charge
VGS = 0 V to 10 V
68 nC
Qg Total Gate Charge
VGS = 0 V to 4.5 V VDD = 13 V, 32 nC
Qgs Gate to Source Gate Charge
ID = 30 A
8.2 nC
Qgd Gate to Drain “Miller” Charge
9.6 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 30 A
(Note 2)
(Note 2)
0.6 0.8
0.8 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30 A, di/dt = 300 A/μs
32 ns
41 nC
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b 125 °C/W when mounted on
a minimum pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 79 mJ is based on starting TJ = 25 °C, L = 2.5 mH, IAS = 8 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 33.7 A.
©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D2
2
www.fairchildsemi.com


Features Datasheet pdf FDMS8560S N-Channel PowerTrench® SyncFE TTM FDMS8560S November 2014 N-Channe l PowerTrench® SyncFETTM 25 V, 70 A, 1.8 mΩ Features „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS (on) = 2.1 mΩ at VGS = 4.5 V, ID = 28 A „ High performance technology for ex tremely low rDS(on) „ SyncFETTM Schott ky Body Diode „ RoHS Compliant Genera l Description This N-Channel SyncFETTM is produced using Fairchild Semiconduct or’s advanced PowerTrench® process. Advancements in both silicon and packag e technologies have been combined to of fer the lowest rDS(on) while maintainin g excellent switching performance by ex tremely low Junction-toAmbient thermal resistance. This device has the added b enefit of an efficient monolithic Schot tky body diode. Applications „ Synchr onous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Top Bottom Pin 1 S D5 4G S S G D6 3S Power 56 D D D D D7 D8 2S 1S MOSFET Maximum Rat.
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