MOSFET. FDMS0300S Datasheet

FDMS0300S Datasheet PDF, Equivalent


Part Number

FDMS0300S

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS0300S Datasheet PDF


FDMS0300S Datasheet
FDMS0300S
N-Channel PowerTrench® SyncFET
30 V, 49 A, 1.8 m
October 2014
Features
General Description
„ Max rDS(on) = 1.8 mat VGS = 10 V, ID = 30 A
„ Max rDS(on) = 2.0 mat VGS = 4.5 V, ID = 25 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS0300S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
D
D
DD
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
194
31
180
242
96
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS0300S
Device
FDMS0300S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS0300S Rev.C1
1
www.fairchildsemi.com

FDMS0300S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
19 mV/°C
500 µA
100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.6 3.0
V
ID = 10 mA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 25 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 5 V, ID = 30 A
1.3 1.8
1.6 2.0 m
1.8 2.5
161 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
6545
2465
210
0.5
8705
3280
315
1.1
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 30 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 30 A
22
12
50
7
95
43
18.2
9.1
35
21
80
13
133
60
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 30 A
(Note 2)
(Note 2)
IF = 30 A, di/dt = 300 A/µs
0.37
0.74
50
84
0.7
1.2
81
136
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 242 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 22 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 34 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS0300S Rev.C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS0300S N-Channel PowerTrench® SyncFE T™ FDMS0300S N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Octob er 2014 Features General Description „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A „ Advanced P ackage and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust pack age design „ 100% UIL tested „ RoHS C ompliant The FDMS0300S has been design ed to minimize losses in power conversi on application. Advancements in both si licon and package technologies have bee n combined to offer the lowest rDS(on) while maintaining excellent switching p erformance. This device has the added b enefit of an efficient monolithic Schot tky body diode. Applications „ Synchro nous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switc h Top Bottom Pin 1 S D5 4G S S G D6 3S D D DD D7 D8 2S 1S MOSFET Maximum Ratings TA = 25 °.
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