FDMS3620S

FDMS3620S PowerTrench® PowerStage July 2012 FDMS3620S PowerTrench® PowerStage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel „ Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A „ Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE Pin ...