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FDMS3600S Dataheets PDF



Part Number FDMS3600S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMS3600S DatasheetFDMS3600S Datasheet (PDF)

FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device includes two speciali.

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FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant „ Communications „ General Purpose Point of Load „ Notebook VCOR.


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