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FDMS3606AS Dataheets PDF



Part Number FDMS3606AS
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMS3606AS DatasheetFDMS3606AS Datasheet (PDF)

FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables opt.

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FDMS3606AS PowerTrench® Power Stage FDMS3606AS PowerTrench® Power Stage September 2011 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCOR.



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