FDD770N15A | Fairchild Semiconductor
MOSFET
FDD770N15A — N-Channel PowerTrench® MOSFET
April 2015
FDD770N15A
N-C.
MOSFET
FDD770N15A — N-Channel PowerTrench® MOSFET
April 2015
FDD770N15A
N-Channel PowerTrench® MOSFET
150 V, 18 A, 77 mΩ
Features
• RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairc.
- FDD770N15A | INCHANGE
- N-Channel MOSFET
- isc N-Channel MOSFET Transistor
FDD770N15A
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤7.
- isc N-Channel MOSFET Transistor
FDD770N15A
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤77mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
36
PD
.
- FDD770N15A | Fairchild Semiconductor
- MOSFET
- FDD770N15A — N-Channel PowerTrench® MOSFET
April 2015
FDD770N15A
N-Channel PowerTrench® MOSFET
150.
- FDD770N15A — N-Channel PowerTrench® MOSFET
April 2015
FDD770N15A
N-Channel PowerTrench® MOSFET
150 V, 18 A, 77 mΩ
Features
• RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.
