FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20
N-Channel MOSFET
200V, 5A, 0.69Ω
Features
• RDS(on) = 0.58Ω (...
FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20
N-Channel MOSFET
200V, 5A, 0.69Ω
Features
RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A Low gate charge( Typ. 5nC ) Low Crss ( Typ. 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
April 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
GD S
D-PAK FDD Series
G DS
I-PAK FDU Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Sour...