MOSFET. FDD6N50F Datasheet

FDD6N50F Datasheet PDF, Equivalent


Part Number

FDD6N50F

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDD6N50F Datasheet PDF


FDD6N50F Datasheet
FDD6N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 5.5 A, 1.15 Ω
November 2013
Features
• RDS(on) = 950 mΩ (Typ.) @ VGS = 10 V, ID = 2.75 A
• Low Gate Charge (Typ. 15nC)
• Low Crss (Typ. 6.3pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD6N50F
500
±30
5.5
2.4
22
270
5.5
8.9
20
89
0.71
-55 to +150
300
FDD6N50F
1.4
83
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDD6N50F Rev. C1
1
www.fairchildsemi.com

FDD6N50F Datasheet
Package Marking and Ordering Information
Part Number
FDD6N50FTM
Top Mark
FDD6N50F
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 2.75 A
VDS = 40 V, ID = 2.75 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 6 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 6 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 5.5 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 16 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 5.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Min.
500
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.15
-
-
-
-
0.95
4.3
720
85
6.3
15
4.4
6.1
17
28.3
33.4
20.5
-
-
-
85
0.15
Max. Unit
-
-
10
100
±100
V
V/oC
μA
nA
5.0 V
1.15 Ω
-S
960
115
9.5
19.8
-
-
pF
pF
pF
nC
nC
nC
44 ns
66.6 ns
76.7 ns
51 ns
5.5 A
22 A
1.5 V
- ns
- μC
©2012 Fairchild Semiconductor Corporation
FDD6N50F Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDD6N50F — N-Channel UniFETTM FRFET® MOSFET FDD6N50F N-Channel UniFETTM FRF ET® MOSFET 500 V, 5.5 A, 1.15 Ω Nove mber 2013 Features • RDS(on) = 950 m Ω (Typ.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 15nC) • Low Cr ss (Typ. 6.3pF) • 100% Avalanche Test ed • Improved dv/dt Capability • Ro HS Compliant Applications • LCD/LED/P DP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply De scription UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET f amily based on planar stripe and DMOS t echnology. This MOSFET is tailored to r educe on-state resistance, and to provi de better switching performance and hig her avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enha nced by lifetime control. Its trr is le ss than 100nsec and the reverse dv/dt i mmunity is 15V/ns while normal planar M OSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and.
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