Document
SUN02A60F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=3.9Ω (Typ.) Low gate charge: Qg=7.5nC (Typ.) Low reverse transfer capacitance: Crss=5pF (Typ.) Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN02A60F
SUN02A60
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK ◎S△UYNΔM02YDADM6□D0D
SDB20D45
Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD□
-. ◎: Option Code
-. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -. □: Package Option Code Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junct.