Power MOSFET. SUN02A60F Datasheet

SUN02A60F MOSFET. Datasheet pdf. Equivalent


AUK SUN02A60F
SUN02A60F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=3.9(Typ.)
Low gate charge: Qg=7.5nC (Typ.)
Low reverse transfer capacitance: Crss=5pF (Typ.)
Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN02A60F
SUN02A60
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK
SUYNΔM02YDADM6D0D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) YMDD
-. : Option Code
-. : Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
-. □: Package Option Code
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 10-JUL-14
KSD-T0O160-000
Rating
600
30
2
1.26
8
130
2
2.3
23
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8


SUN02A60F Datasheet
Recommendation SUN02A60F Datasheet
Part SUN02A60F
Description New Generation N-Ch Power MOSFET
Feature SUN02A60F; SUN02A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-s.
Manufacture AUK
Datasheet
Download SUN02A60F Datasheet




AUK SUN02A60F
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SUN02A60F
Rating
Max. 5.43
Max. 62.5
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
ID=250uA, VDS=VGS
VDS=600V, VGS=0V
VDS=600V, Tc=150C
VDS=0V, VGS=30V
VGS=10V, ID=1A
VDS=10V, ID=1A
VDS=25V, VGS=0V,
f=1.0MHz
VDS=300V, ID=2A,
RG=25
VDS=480V, VGS=10V,
ID=2A
Min.
600
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-5
-1
- 100
- 100
3.9 4.7
2.5 -
420 -
32 -
5-
35 -
29 -
48 -
22 -
7.5 10
4-
1.5 -
Unit
V
V
uA
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, ISD=2A
trr ISD=2A, VGS=0V
Qrr dIF/dt=100A/us
--2
--8
- - 1.4
- 230 -
-1-
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=59.5mH, IAS=2A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width300us, Duty cycle2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 10-JUL-14
KSD-T0O160-000
www.auk.co.kr
2 of 8



AUK SUN02A60F
Typical Electrical Characteristics Curves
Fig. 1 Typical Output Characteristics
SUN02A60F
Fig. 2 Typical Output Characteristics
Fig.3 On-Resistance Variation with Drain Current
and Gate Voltage
Fig. 4 Body Diode Forward Voltage Variation
with Source Current
Fig. 5 Typical Capacitance Characteristics
Fig. 6 Typical Total Gate Charge Characteristics
Rev. date: 10-JUL-14
KSD-T0O160-000
www.auk.co.kr
3 of 8







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)