SUN10A60F

SUN10A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)  Low gate charge: Qg=33nC (Typ.)  Low reverse transfer capacitance: Crss=12.5pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package GDS TO-220F-3L SUN10A60F SUN10A60 TO-220F-3L Marking Information AAUUKK ◎S△UYNΔM10YDADM6□D0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD□ -. ◎: Option Code -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -. □: Package Option Code Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junc...