New Generation N-Ch Power MOSFET
Description
SUN12A65F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=0.68Ω (Typ.) Low gate charge: Qg=38nC (Typ.) Low reverse transfer capacitance: Crss=14.5pF (Typ.) Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
GDS
TO-2...
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