SMN01Z30Q

SMN01Z30Q Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=300V(Min.)  Low Crss : Crss=3.2pF(Typ.)  Low gate charge : Qg=2.9nC(Typ.)  Low RDS(on) : RDS(on)=8Ω(Max.) Ordering Information Type No. Marking Package Code SMN01Z30Q SMN01Z30 SOT-223 PIN Connection G D S D G SOT-223 D S Marking Diagram SMN01Z30 YWW Column 1 : Device Code Column 2 : Production Information e.g.) YWW -. Y : Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current (DC) * Drain current (Pulsed) * ID TC=25C TC=100C IDM Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy     PD IAS EAS IAR EAR Junction temperature TJ Storage temperature range * Limited by maximum junction temperature Tstg Rating 300 20 1.3 0.78...