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Semiconductor
SUT462N
Epitaxial planar NPN/PNP silicon transistor
Descriptions
• Complex type bipolar transistor
Features
• Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW(Max.) • Both 2SA1980 chip and 2SC5343 chip in SOT-26 Package
Ordering Information
Type NO.
Marking
SUT462N
3X
Package Code SOT-26
Outline Dimensions
unit : mm
0.95 Typ.
2.60~3.00 1.50~1.70
61 52 43
0.45 Max.
2.80~3.00
• Equivalent Circuit
456
Tr1 Tr2
321
0.95 Typ.
1.00~1.20 0.19 Max.
0.10 Max.
0.40 Min.
PIN Connections
1. Collector 1 2. Base 2 3. Emitter 2 4. Collector 2 5. Base 1
6. Emitter 1
KSD-T5P002-000
1
Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range ※: Total rating
VCBO VCEO VEBO
IC PC※ TJ Tstg
Rating Tr1 Tr2
60 -50 50 -50 5 -5 150 -150
300 150 -55~150
SUT.