Document
STC4073D
NPN Silicon Transistor
Descriptions
• General purpose amplifier • High voltage application
PIN Connection
Features
• High collector breakdown voltage : VCEO = 120V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
Ordering Information
Type No.
Marking
STC4073D
STC4073□
□ : Year & Week Code
TO-252
Package Code TO-252
Absolute maximum ratings
Characteristic
Symbol
Ratings
(Ta=25°C)
Unit
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current
Collector power dissipation
Junction temperature Storage temperature * : Single pulse, tp= 300 ㎲
VCBO VCEO VEBO
IC ICP* PC(Ta= 25°C) PC(TC= 25°C) TJ Tstg
120 120
6 1 2 1 10 150 -55~150
V V V A(DC) A(Pulse)
W
°C °C
KSD-T6O027-000
1
STC4073D
Electrical Characteristics
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BVCBO
IC=100μA, IE=0
120 - - V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
12.