FDB024N04AL7

FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source D (Pin4, tab) G (Pin1) S (Pin2,3,5,6,7) MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDB024N04AL7 VDSS VGSS ID Drain to Source V...